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IRFR13N20DPBF

SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A )

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

文件:688.93 Kbytes 页数:11 Pages

IRF

IRFR13N20DPBF

SMPS MOSFET

Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

文件:4.32081 Mbytes 页数:10 Pages

KERSEMI

IRFR13N20DPBF

HIGH FREQUENCY DC-DC CONVERTERS

文件:689.89 Kbytes 页数:11 Pages

IRF

IRFR13N20DPBF

High frequency DC-DC converters

文件:689.89 Kbytes 页数:11 Pages

IRF

IRFR13N20DPBF_15

HIGH FREQUENCY DC-DC CONVERTERS

文件:689.89 Kbytes 页数:11 Pages

IRF

详细参数

  • 型号:

    IRFR13N20DPB

  • 功能描述:

    MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2016+
TO252
5623
只做原装,假一罚十,公司可开17%增值税发票!
询价
IR
23+
SOT-252
65400
询价
IR
22+
TO-252
21350
原装正品,实单请联系
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-252
300
询价
IR
16+
NA
8800
原装现货,货真价优
询价
IR
24+
原厂封装
34275
原装现货假一罚十
询价
Infineon
24+
NA
3000
进口原装正品优势供应
询价
IR
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
更多IRFR13N20DPB供应商 更新时间2025-11-18 22:58:00