IRFR120TRRPBF资料datasheet下载供应商报价-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR120TR	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.70201 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR120TR	文件：179.46 Kbytes Page：6 Pages	HEXFET POWER MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR120) • Str 文件：179.46 Kbytes 页数：6 Pages	IRF	IRF
IRFR120TRL	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.88411 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR120TRL	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.70201 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR120TRL	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.27848 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR120TRL	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.22483 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR120TRLPBF	文件：4.27848 Mbytes Page：7 Pages	Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.27848 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR120TRLPBF	文件：4.22483 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：4.22483 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR120TRLPBF	文件：1.88411 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.88411 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay
IRFR120TRLPBF	文件：1.70201 Mbytes Page：8 Pages	IRFR120 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.70201 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世威世科技公司	Vishay

详细参数

型号：
IRFR120T
功能描述：
MOSFET N-Chan 100V 7.7 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	IRFR120TRRPBF	VISHAY(威世)	24+	TO-252	9908	支持大陆交货,美金交易。原装现货库存。	询价
艾睿（深圳）半导体有限公司	IRFR120TRRPBF	VISHAY(威世)	2447	TO-252-3	315000	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市科雨电子有限公司	IRFR120TRRPBF	VISHAY	25+	TO-252	3675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	IRFR120TRRPBF	Vishay Siliconix	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原厂渠道,现货配单	询价
深圳市鹏顺微电子科技有限公司	IRFR120TRRPBF	Vishay Siliconix	2022+	TO-252-3,DPak(2 引线 + 接片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳庞田科技有限公司	IRFR120TRRPBF	IR	2023+环保现货	TO-252	18000	专注军工、汽车、医疗、工业等方案配套一站式服务	询价
深圳市宏捷佳电子科技有限公司	IRFR120TRRPBF	IR	2023+	TO-252	50000	原装现货	询价
深圳市安富世纪电子有限公司	IRFR120TRRPBF	IR	23+	D-PAK	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFR120TRRPBF	IR	23+	D-PAK	7000		询价
深圳市南科功率半导体有限公司	IRFR120TRRPbF	NK/南科功率	2025+	TO-252-2	986966	国产	询价

更多IRFR120T供应商更新时间2025-11-9 13:43:00

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