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IRFR014TRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU014

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半导体

IRFU014

N-CHANNELPOWERMOSFET

SamsungSamsung semiconductor

三星三星半导体

IRFU014

PowerMOSFET(Vdss=60V,Rds(on)=0.20Ohm,Id=7.7A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-Pakisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechni

IRF

International Rectifier

IRFU014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU014

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFU014

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU014

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU014

PowerMOSFET

FEATURES •DynamicdV/dtrating •Surface-mount(IRFR014,SiHFR014) •Straightlead(IRFU014,SiHFU014) •Availableintapeandreel •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半导体

IRFU014A

ADVANCEDPOWERMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=60V ♦LowerRDS(ON):0.097Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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