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IRFP9240中文资料12A, 200V, 0.500 Ohm, P-Channel Power MOSFET数据手册Renesas规格书

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厂商型号

IRFP9240

功能描述

12A, 200V, 0.500 Ohm, P-Channel Power MOSFET

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

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更新时间

2025-9-23 9:39:00

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IRFP9240规格书详情

描述 Description

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

特性 Features

• 12A, 200V
• rDS(ON) = 0.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

技术参数

  • 型号:

    IRFP9240

  • 功能描述:

    MOSFET P-Chan 200V 12 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-247
8560
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IR
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30000
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Vishay(威世)
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20094
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IR
12+
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48
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Vishay Siliconix
22+
TO2473
9000
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VISHAY
ROHS
8560
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VISHAY
24+
TO-247
12000
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IR
24+
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27500
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IR
23+24
TO-247
29580
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IR
05+
TO-247
800
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