IRFP254N中文资料HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 125mΩ, ID = 23 A数据手册Infineon规格书
IRFP254N规格书详情
描述 Description
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
技术参数
- 型号：
IRFP254N
- 功能描述：
MOSFET N-Chan 250V 23 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
9896 |
询价 | |||
IR |
07+ |
TO-247 |
4 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-247 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
IR |
24+ |
TO-247AC |
8866 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-247 |
8000 |
新到现货，只做全新原装正品 |
询价 | ||
VISHAY |
2018+ |
26976 |
代理原装现货/特价热卖! |
询价 | |||
VIS |
24+ |
TO-247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
TO-247 |
6633 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | ||||
IR |
23+ |
TO-247AC |
6000 |
原装正品，支持实单 |
询价 | ||
IR |
23+ |
TO-247AC |
7300 |
专注配单,只做原装进口现货 |
询价 |
