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IRFIZ24NPBF中文资料PDF规格书
IRFIZ24NPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
产品属性
- 型号：
IRFIZ24NPBF
- 功能描述：
MOSFET MOSFT 55V 13A 70mOhm 13.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
FULLPAK220 |
25000 |
原装正品,假一赔十! |
询价 | ||
IR(国际整流器) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
Infineon/英飞凌 |
21+ |
FULLPAK220 |
6000 |
原装现货正品 |
询价 | ||
IR |
04+ |
TO220F |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
FULLPAK220 |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
TO-220F |
62850 |
询价 | ||||
IR |
TO-220F |
198589 |
假一罚十原包原标签常备现货! |
询价 | |||
Infineon(英飞凌) |
23+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON/英飞凌 |
2418+ |
N/A |
23566 |
原装优势现货!一片起卖!可开专票! |
询价 | ||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 |
