IRFF9230

-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFF9230

HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

200V,P-CHANNEL TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET

IRFF9230

-4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET; • -4.0A, -200V\n• rDS(ON) = 0.800Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance;

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

IRFF9230

MOSFETs and JFETs;

IRFF9230

HiRel MOSFETs; \n优势:\n;

IRFF9230

P-Channel MOSFET in a Hermetically sealed TO39

IRFF9230

Avalanche-Energy-Rated P-Channel Power MOSFETs