IRFF310

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRFF310

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET

1.35A,400V,3.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

IRFF310

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?쏷RANSISTORS THRU-HOLE (TO-205AF)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowonstateresistancecombinedwithhightransconductance.TheHEXFETtransistorsalsofea

IRFF310

N-Channel MOSFET in a Hermetically sealed TO39

IRFF310

1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET;

IRFF310

Power MOSFET field effect power transistor. Drain-source voltage 400 V.;

IRFF310

MOSFETs and JFETs;