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IRF9Z24NSTRLPBF

Advanced Process Technology

文件:395.11 Kbytes 页数:11 Pages

IRF

IRF9Z24NSTRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件:179.21 Kbytes 页数:11 Pages

IRF

IRF9Z24PBF

power mosfet

文件:1.50137 Mbytes 页数:8 Pages

IRF

IRF9Z24PBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件:1.81473 Mbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRF9Z24NSTRLPB

  • 功能描述:

    MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
2020+
TO-263
22000
全新原装正品 现货库存 价格优势
询价
INFINEON/IR
1907+
NA
1600
20年老字号,原装优势长期供货
询价
INFINEON/英飞凌
25+
TO-263
32360
INFINEON/英飞凌全新特价IRF9Z24NSTRLPBF即刻询购立享优惠#长期有货
询价
IR
SOT-263
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
16+
TO-263
6306
全新原装/深圳现货库2
询价
INFINEON/英飞凌
24+
210494
只做原厂渠道 可追溯货源
询价
INFINEON/IR
14+
1600
TO-263-3 (D2PAK)
询价
INFINEON
100000
代理渠道/只做原装/可含税
询价
IR
2021+
D2-PAK
9000
原装现货,随时欢迎询价
询价
更多IRF9Z24NSTRLPB供应商 更新时间2025-11-3 14:08:00