Ultra Low On-Resistance

文件：242.51 Kbytes 页数：8 Pages

IRF

HEXFET짰 Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

文件：145.76 Kbytes 页数：8 Pages

IRF

Ultra Low On-Resistance

文件：242.14 Kbytes 页数：8 Pages

IRF

6-rows 85 mA LEDs driver with boost regulator for LCD panels backlight

文件：1.16864 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体