HEXFET® Power MOSFET

These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. T

文件：124.19 Kbytes 页数：9 Pages

SYC

Ultra Low On-Resistance

Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：94.54 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1,Consumer qualification Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabili

文件：157.75 Kbytes 页数：9 Pages

IRF

P-Channel 30-V (D-S) MOSFET

文件：1.03753 Mbytes 页数：9 Pages

VBSEMI

微碧半导体