IRF7311TR中文资料IRF数据手册PDF规格书
IRF7311TR规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Generation V Technology
• Ultra Low On-Resistance
• Dual N-Channel MOSFET
• Surface Mount
• Fully Avalanche Rated
产品属性
- 型号:
IRF7311TR
- 功能描述:
MOSFET 2N-CH 20V 6.6A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
HEXFET®
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
SOP8 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
2023+ |
SOP-8 |
15982 |
全新原装正品,优势价格 |
询价 | ||
IR/VISHAY |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
IR |
20+ |
SOP-8 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
24+ |
SOP8 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
07+ |
SOP-8 |
181 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
2026+ |
SOP8 |
7297 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
IRF7311TR |
25+ |
1553 |
1553 |
询价 | |||
IRF |
22+ |
SOP |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
Infineon/英飞凌 |
25+ |
SOIC-8_150mil |
25000 |
原装正品,假一赔十! |
询价 |


