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IRF6648TR1中文资料PDF规格书
IRF6648TR1规格书详情
Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHs Compliant Containing No Lead and Bromide
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Optimized for Synchronous Rectification for 5V to 12V outputs
● Ideal for 24V input Primary Side Forward Converters
● Low Conduction Losses
● Compatible with Existing Surface Mount Techniques
产品属性
- 型号:
IRF6648TR1
- 功能描述:
MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
4574 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2016+ |
SMD |
3683 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
12+ |
12+PBF |
5308 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
2018+ |
SMD |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
IR |
2018+ |
SMD |
80000 |
代理进口原装现货假一赔十 |
询价 | ||
IR |
23+ |
SMD |
12500 |
全新原装现货热卖,价格优势 |
询价 | ||
IR |
22+23+ |
SMD |
52469 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
IR |
2020 |
SMD |
3300 |
绝对全新原装现货,欢迎来电查询 |
询价 | ||
IR |
23+ |
SOT |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 |