IRL630PBF

PowerMOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

IRL630S

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableo

IRL630S

AvailableinTapeandReel

IRL630S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

IRL630SPBF

HEXFETPowerMOSFET

VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableof

IRL630SPBF

PowerMOSFET

IRL630STRLPBFA

PowerMOSFET

IRL630STRRPBFA

PowerMOSFET

IRLHM630

SmallPowIRMOSFETs

IRLHM630PBF

BatteryOperatedDCMotorInverterMOSFET