Power MOSFET

文件：217.5 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：217.5 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：668.58 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A)

DESCRIPTION Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial ap

文件：173.31 Kbytes 页数：6 Pages

IRF