IRF5Y3710CM中文资料IRF数据手册PDF规格书

HEXFET® POWER MOSFET THRU-HOLE (TO-257AA)

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.

Features:

■ Low RDS(on)

■ Avalanche Energy Ratings

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

■ Light Weight