首页 >IRF5305T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®PowerMOSFETsarewellknownfor,provid | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.065ohm,Id=-31A) | IRF International Rectifier | IRF | ||
-60VP-ChannelEnhancementModeMOSFET GENERALFEATURESVDS=-60V,ID=-30A RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
-60VP-ChannelEnhancementModeMOSFET DESCRIPTION Theusesadvancedtrench technologytoprovideexcellentRDS(ON)andlowgatecharge.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GENERALFEATURES VDS=-60V,ID=-30A RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | EVVOSEMI | ||
HEXFET짰PowerMOSFET(VDSS=-55V,RDS(on)=0.065廓,ID=-31A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®PowerMOSFETsarewellknownfor,provid | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®PowerMOSFETsarewellknownfor,provid | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF |
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