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IRF5210S

PowerMOSFET(Vdss=-100V,Rds(on)=0.06ohm,Id=-40A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF5210S

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF5210S

P-Ch100VFastSwitchingMOSFETs

100EASGuaranteed GreenDeviceAvailable SuperLowGateCharge ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

IRF5210SPBF

HEXFETPowerMOSFET

Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces

IRF

International Rectifier

IRF5210SPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF5210SPBF

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF5210STRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF5210STRLPBF

P-ChannelPowerMOSFET

Application +DC/DCConverter Portableequipmentandbattery «PowerSwitch

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

IRF5210STRR

AdvancedProcessTechnology

IRF

International Rectifier

IRFG5210

200V,Combination2N-2P-CHANNELHEXFETMOSFETTECHNOLOGY

IRF

International Rectifier

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