IRF521中文资料新泽西半导体数据手册PDF规格书

描述 Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits.

• Low RDs

• VQS Rated at ±20 V

• Silicon Gate for Fast Switching Speeds

• bss. Vos(on), Specified at Elevated Temperature

• Rugged

• Low Drive Requirements

• Ease of Paralleling