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IRF3711ZLPBF

HEXFETPowerMOSFET

Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •Lead-Free Benefits •LowRDS(on)at4.5VVGS •Ultra-LowGateImpedance •FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRF3711ZPBF

HEXFETPowerMOSFET

Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •Lead-Free Benefits •LowRDS(on)at4.5VVGS •Ultra-LowGateImpedance •FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRF3711ZS

HEXFETPowerMOSFET

Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower Benefits •LowRDS(on)at4.5VVGS •Ultra-LowGateImpedance •FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRF3711ZSPBF

HEXFETPowerMOSFET

Applications •HighFrequencySynchronousBuckConvertersforComputerProcessorPower •Lead-Free Benefits •LowRDS(on)at4.5VVGS •Ultra-LowGateImpedance •FullyCharacterizedAvalancheVoltageandCurrent

IRF

International Rectifier

IRFR3711

PowerMOSFET(Vdss=20V,Rds(on)max=6.5mohm,Id=110A??

Benefits ●Ultra-LowGateImpedance ●VeryLowRDS(on)at4.5VVGS ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse ●HighFrequencyBuckConvertersforServerProcessorP

IRF

International Rectifier

IRFR3711

N-ChannelMOSFETTransistor

•DESCRITION •HighFrequencyBuckConvertersForServerProcessorPowerSynchronousFET •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤6.5mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFR3711PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFR3711PBF

HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse

IRF

International Rectifier

IRFR3711TRPBF

HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecomandIndustrialUse

IRF

International Rectifier

IRFR3711Z

HEXFETPowerMOSFET

Benefits ●VeryLowRDS(on)at4.5VVGS ●Ultra-LowGateImpedance ●FullyCharacterizedAvalancheVoltageandCurrent Applications ●HighFrequencySynchronousBuckConvertersforComputerProcessorPower ●HighFrequencyIsolatedDC-DCConverterswithSynchronousRectificationforTelecom

IRF

International Rectifier

详细参数

  • 型号:

    IRF3711STRLPBF

  • 功能描述:

    MOSFET 20V 1 N-CH HEXFET 6mOhms 29nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-263
7500
询价
IR
24+
TO-263
5000
只做原装公司现货
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
Infineon Technologies
21+
D2PAK
3200
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
INFINEON
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
21+
TO-263
10000
原装现货假一罚十
询价
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
Infineon Technologies
23+
TO2633 D2Pak (2 Leads + Tab) T
9000
原装正品,支持实单
询价
更多IRF3711STRLPBF供应商 更新时间2025-7-29 16:30:00