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IRF2907ZSPBF规格书详情
VDSS = 75V
RDS(on) = 4.5mΩ
ID = 160A
描述 Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
特性 Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
产品属性
- 型号：
IRF2907ZSPBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 4.5mOhms 180nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IRF2907ZSPBF |
19 |
19 |
询价 | ||||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
IR/INFINEON |
24+ |
SMD |
600 |
“芯达集团”专营军工百分之百原装进口 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
IR |
三年内 |
1983 |
只做原装正品 |
询价 | |||
IR |
24+ |
D2-PAK |
2500 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
1923+ |
TO-263 |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
23+ |
D2-PAK |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
询价 |
