首页>IRF2807ZPBF>规格书详情
IRF2807ZPBF中文资料IRF数据手册PDF规格书
IRF2807ZPBF规格书详情
Description
This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
产品属性
- 型号：
IRF2807ZPBF
- 功能描述：
MOSFET MOSFT 75V 89A 9.4mOhm 71nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
244 |
询价 | |||
Infineon/英飞凌 |
24+ |
TO-220AB |
25000 |
原装正品,假一赔十! |
询价 | ||
INFINOEN |
24+ |
TO-220 |
90000 |
一级代理进口原装现货、假一罚十价格合理 |
询价 | ||
IR |
24+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
TH/韩国太虹 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
询价 | |||
IR |
23+ |
TO-220 |
50317 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 |
