IRF241R中文资料新泽西半导体数据手册PDF规格书

Avalanche Energy Rated N-Channel Power MOSFETs

The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field-effect transistors deslgnedfor appI ications such asswitchi ng regulators, switching converters, motor drivers,relay drivers,anddrivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.

The IRF-types are supplied in the JEDEC TO-204AE steel package.

Features:

■ Single pulse avalanche energy rated

■ SOX Ispower-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High Input Impedance