Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designe

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IRF

TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)

HEXFET® TRANSISTOR N-CHANNEL AVALANCHE ENERGY RATED AND dv/dt RATED 60 Volts, 0.017 Ohm HEXFET

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IRF

Simple Drive Requirements

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POWER MOSFET THRU-HOLE (TO-254AA)

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