IRFS350A

AdvancedPowerMOSFET

FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=400V ♦LowRDS(ON):0.254Ω(Typ.)

IRFS350A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

ISCNH350B

iscN-ChannelMOSFETTransistor

IXFH350

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

J350D

DisconnectableCrimpstyleconnectors(Wire-to-board/Wire-to-wire)

Features–––––––––––––––––––––––– •Double-springconstruction Forsuperiorcontactreliability,thereceptaclecontacthasa double-springconstructionconsistingofamainspringanda contactpressureadjustmentspring. Inaddition,aspringstopperisincorporatedintheconnectorto fac

JJN-350

JJNLimitron??300Vac,1-1200A,fast-actingClassTfuses

JJS-350

JJS??600Vac,1-800A,Fast-ActingFuses

JJS-350

JJSLimitron??600Vac,1-800A,fast-actingClassTfuses

JK-MSMD350

ResettableFusePTC

JK-MSMD350

ResettableFusePTCSMD1812Series