5mm Infrared LED, T-1 3/4

Features ․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb free ․This product itself will remain within RoHS compliant version.

文件：368.65 Kbytes 页数：7 Pages

EVERLIGHT

台湾亿光

5mm Infrared LED

Description :
Infrared Emitting Diode (IR333C-A) is a high intensity diode, molded in a water clear plastic package. The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Features :
High radiant intensity
Peak wavelength p=940nm

文件：145.32 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low Input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件：208.64 Kbytes 页数：5 Pages

SAMSUNG

三星

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：49.06 Kbytes 页数：2 Pages

ISC

无锡固电