| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel30V(D-S)SuperJunctionPowerMOSFET FEATURES •UltraSmallDFN2X2Chipscale •DT-TrenchPowerMOSFET PackagingReducesFootprintArea APPLICATIONS •DC/DCConvertersinComputing,Servers,andPOL •IsolatedDC/DCConvertersinTelecomandIndustrial | DINTEK DinTek Semiconductor Co,.Ltd | DINTEK | ||
SLIDESWITCHES SLIDESWITCHES FEATURES&BENEFITS ►Varietyofpackagestyles&sizes ►Upto6poles ►Varietyoffunction ►Positivedetent ►SMToptions | E-SWITCH E-Switch, Inc. | E-SWITCH | ||
SLIDESWITCHES SLIDESWITCHES FEATURES&BENEFITS ►Varietyofpackagestyles&sizes ►Upto6poles ►Varietyoffunction ►Positivedetent ►SMToptions | E-SWITCH E-Switch, Inc. | E-SWITCH | ||
SLIDESWITCHES SLIDESWITCHES FEATURES&BENEFITS ►Varietyofpackagestyles&sizes ►Upto6poles ►Varietyoffunction ►Positivedetent ►SMToptions | E-SWITCH E-Switch, Inc. | E-SWITCH | ||
SLIDESWITCHES SLIDESWITCHES FEATURES&BENEFITS ►Varietyofpackagestyles&sizes ►Upto6poles ►Varietyoffunction ►Positivedetent ►SMToptions | E-SWITCH E-Switch, Inc. | E-SWITCH | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
P-ChannelPowerMOSFET Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
General-PurposeSwitchingDeviceApplications | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
P-ChannelPowerMOSFET Features •TheEMH2308incorporatesaP-channelMOSFETthatfeaturelowON-resistanceandultrahigh-speedswitching,therebyenablinghigh-densitymounting •1.8Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MACHINEPINSOCKET | ECE 百容 | ECE | ||
SiliconSchottkyBarrierDiode Scope ThepresentspecificationsshallapplytoanFMEN-2308. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken Electric Co Ltd. 三垦日本三垦 | Sanken | ||
3Amps60VoltageN-ChannelPOWERMOSFET | FCI Amphenol ICC | FCI | ||
60VN-ChannelEnhancement-ModeMOSFET | FS First Silicon Co., Ltd | FS | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheG2308utilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheG2308isuniversallyusedforallcommercial-industrialapplications. Features *SimpleDriveRequirement *SmallPackageOutline | GTM 勤益投資控股股份有限公司 | GTM | ||
Oblong,Domed,PCBMount Oblong,Domed,PCBMount RightAngleViewIndicatorArray TheG23XXBindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasstatusindicatorswhenusedinconjunctionw | idea idea | idea | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheG2308Eutilizedadvancedprocessingtechniquestoachievethelowestpossibleon-resistance,extremelyefficientandcost-effectivenessdevice. TheSOT-23packageisuniversallyusedforallcommercial-industrialapplications. Features *Capableof2.5Vgatedrive *Loweron-r | GTM 勤益投資控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
Oblong,Domed,PCBMount Oblong,Domed,PCBMount DirectViewIndicatorArray TheG23XXSindicatorarrayhasbeenspecificallydesignedforhighdensitypackagingwhilemaintainingvisibility.From4to16LEDsarelocatedon2.54mm(0.1)centers,whichmakesitidealasastatusindicatorwhenusedinconjunctionwith | idea idea | idea | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | GTM |
产品属性
- 产品编号：
IR2308STRPBF
- 制造商：
Infineon Technologies
- 类别：
集成电路（IC） > 栅极驱动器
- 包装：
卷带（TR）
- 驱动配置：
半桥
- 通道类型：
独立式
- 栅极类型：
IGBT，N 沟道 MOSFET
- 电压 - 供电：
10V ~ 20V
- 逻辑电压 - VIL，VIH：
0.8V，2.9V
- 电流 - 峰值输出（灌入，拉出）：
200mA，350mA
- 输入类型：
非反相
- 上升/下降时间（典型值）：
150ns，50ns
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
8-SOIC（0.154"，3.90mm 宽）
- 供应商器件封装：
8-SOIC
- 描述：
IC GATE DRVR HALF-BRIDGE 8SOIC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
8-SOIC(0.154,3.90mm 宽) |
27132 |
英飞凌电源管理芯片-原装正品 |
询价 | ||
IR/INFINEON |
1735+ |
SOP8 |
6768 |
原装正品 可含税交易 |
询价 | ||
IR/INFINEON |
23+ |
SOP8 |
12500 |
全新原装现货,假一赔十 |
询价 | ||
Infineon(英飞凌) |
23+ |
SOP-8 |
2669 |
深耕行业12年,可提供技术支持。 |
询价 | ||
IR |
0831+ |
SOP-8 |
2685 |
询价 | |||
IR |
0450+ |
SOP-8 |
3300 |
全新原装现货绝对自己公司特价库 |
询价 | ||
1525+ |
SOP-8 |
30000 |
绝对原装进口现货可开17%增值税发票 |
询价 | |||
IR |
23+ |
SOP-8 |
9896 |
询价 | |||
IR |
04+ |
SOP8 |
120000 |
现货原装库存热卖 |
询价 | ||
InternationalRectifier |
2022 |
ICMOSFET/IGBTDVRHVHS8-SO |
5058 |
原厂原装正品,价格超越代理 |
询价 |
相关规格书
更多- IR2520DPBF
- IR2520DSTRPBF
- IR25600PBF
- IR25600STRPBF
- IR25601STRPBF
- IR25602STRPBF
- IR25603SPBF
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- IR25606SPBF
- IR25607SPBF
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- IR2D20U
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- IR33W7LR20
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- IR3447MTRPBF
- IR3473MTR1PBF-CUTTAPE
- IR3475MTRPBF
- IR3476MTR1PBF-CUTTAPE
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- IR3500MTRPBF
- IR3502BMTRPBF
- IR3505ZMTRPBF
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- IR3513MTRPBF
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- IR3563BMTRPBF-CUTTAPE
- IR3565BMTRPBF
- IR3566BMTRPBF-CUTTAPE
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- IR3575MTRPBF
相关库存
更多- IR2520DSPBF
- IR25-21C/TR8
- IR25600SPBF
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- IR25602SPBF
- IR25603PBF
- IR25603STRPBF
- IR25604STRPBF
- IR25606STRPBF
- IR25607STRPBF
- IR26-51C/L110/TR8
- IR2D07
- IR2E46Y6
- IR2E51Y6
- IR3000FC
- IR3084UMTRPBF
- IR3086AMTRPBF-CUTTAPE
- IR323/H0-A
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- IR333-A
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- IR33A9MR20
- IR33V9MR20
- IR33W9MR20
- IR33Z9MR20
- IR3448MTRPBF
- IR3473MTRPBF
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- IR3500AMTRPBF
- IR3500VMTRPBF
- IR3503MTRPBF
- IR3507ZMTRPBF
- IR3510MTRPBF
- IR3513ZMTRPBF-CUTTAPE
- IR3535MTRPBF
- IR3536MTRPBF
- IR3541MTRPBF
- IR3551MTRPBF
- IR3563BMTRPBF
- IR3564BMTRPBF
- IR3566BMTRPBF
- IR3567BMTRPBF
- IR3570BMTRPBF
- IR3588MTRPBF
