IR2109集成电路（IC）的栅极驱动器规格书PDF中文资料

描述 Description

The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum drivercross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

特性 Features

• Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V, 5V and 15V input logic compatible

• Cross-conduction prevention logic

• Matched propagation delay for both channels

• High side output in phase with IN input

• Logic and power ground +/- 5V offset.

• Internal 540ns dead-time, and programmable up to 5us with one external RDTresistor (IR21094)

• Lower di/dt gate driver for better noise immunity

• Shut down input turns off both channels.