Description

The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

• Floating channel designed for bootstrap operation

   Fully operational to +600V

   Tolerant to negative transient voltage

   dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

• 3.3V, 5V, and 15V logic input compatible

• Matched propagation delay for both channels

• Outputs in phase with inputs (IR2101) or out of

   phase with inputs (IR2102)

• Also available LEAD-FREE

IR2101S属于集成电路（IC） > 栅极驱动器。英飞凌科技公司制造生产的IR2101S栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。