首页 >IR2015S(WHITE)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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IGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.0V@IC=27A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·InductionHeating,UPS ·AC&DCmotorcontrolsandgeneralpurposeinverters | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
BIPOLARLINEARINTEGRATEDCIRCUIT(RIPPPLEFILTERFOR1.5VHEADPHONESTEREO)
| KECKEC CORPORATION KEC株式会社 | KEC | ||
BIPOLARLINEARINTEGRATEDCIRCUIT(RIPPPLEFILTERFOR1.5VHEADPHONESTEREO)
| KECKEC CORPORATION KEC株式会社 | KEC | ||
null | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
P-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •ExcellenthFELinearity :hFE(2)=25(Min.)atVCE=-6V,IC=-400mA. •ComplementarytoKTC4076. | KECKEC CORPORATION KEC株式会社 | KEC | ||
PNPGeneralPurposeTransistors PNPGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
TRANSISTOR(PNP) FEATURES ExcellenthFELinearity ComplementarytoKTC4076 APPLICATIONS GeneralPurposeSwitching | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
PNPSiliconEpitaxialPlanarTransistor FEATURES ●Powerdissipation.(PC=100mW) ●ExcellenthFELinearity. ●ComplementarytoKTC4076. ●Smallpackage. APPLICATIONS ●Generalpurposeapplicationandswitchingapplication. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.5A Collector-basevoltage V(BR)CBO:-35V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | WINNERJOIN |
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