丝印：N；Package：PG-WHTFN-9；MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • Optimized for synchronous rectification • N-channel, logic level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.5937 Mbytes 页数：13 Pages

Infineon

英飞凌

OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

\n优势:\n• Enabling highest power density and performance\n• Superior thermal performance\n• Optimized layout possibilities for efficient use of real-estate\n• Simplifying parallel configuration of multiple MOSFETs with center-gate footprint\n• Improved PCB losses\n• Reduced parasitics;

Infineon

英飞凌

MOSFET OptiMOSTM 6 Power-Transistor, 40 V

Features • Optimized for synchronous rectification • N-channel, logic level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.65443 Mbytes 页数：13 Pages

Infineon

英飞凌

OptiMOSTM Power-MOSFET, 40 V

文件：1.41318 Mbytes 页数：13 Pages

Infineon

英飞凌

OptiMOSTM Power-MOSFET, 40 V

Features •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.4171 Mbytes 页数：13 Pages

Infineon

英飞凌