IQD005N04NM6SC中文资料OptiMOS ™功率 MOSFET 40 V 正常电平，采用 PQFN 5x6 源极朝下 DSC 封装，具有非常低的 RDS(on)。数据手册Infineon规格书

描述 Description

OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on).

特性 Features

• Cutting edge 40 V silicon technology
• Outstanding FOMs
• Improved thermal performance
• Ultra-low parasitics
• Maximized chip/package ratio

优势:
• Minimized conduction losses
• Reduced voltage overshoot
• Increased maximum current capability
• Fast switching
• Less device paralleling required
• Lowest RDS(on) on a 5x6 footprint
• Improved thermal performance
• Easy thermal management
• Best switching performance
• Industry-standard package