丝印：95R310D7；Package：PG-TO247-3；MOSFET 950V CoolMOSª PFD7 SJ Power Device

Features • Integrated ultra-fast body diode • Best-in-class reverse recovery charge Qrr • Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated fast body diode • Best-in-class CoolMOS™ quality and relia

文件：1.34609 Mbytes 页数：14 Pages

INFINEON

英飞凌

采用 TO-247 封装的 950 V CoolMOS ™ PFD7 超结 MOSFET

\n优势:\n• Best-in-class hard commutation ruggedness enabling usage across topologies\n• Up to 0.5% efficiency gain and up to 4°C lower MOSFET temperature compared to CoolMOS™ C3\n• Power density improvement compared to latest CoolMOS™ C3 and the closest competitor\n• Improved production yield by ;

Infineon

英飞凌

MOSFET 950V CoolMOSª PFD7 SJ Power Device

Features • Integrated ultra-fast body diode • Best-in-class reverse recovery charge Qrr • Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated fast body diode • Best-in-class CoolMOS™ quality and relia

文件：1.12352 Mbytes 页数：14 Pages

INFINEON

英飞凌

MOSFET 950V CoolMOSª PFD7 SJ Power Device

Features • Integrated ultra-fast body diode • Best-in-class reverse recovery charge Qrr • Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated fast body diode • Best-in-class CoolMOS™ quality and relia

文件：1.23717 Mbytes 页数：14 Pages

INFINEON

英飞凌