CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO247 • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi

文件：563.26 Kbytes 页数：11 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage- VDSS=900V(Min) ·Static Drain-Source On-Resistance RDS(on) = 0.12Ω(Max)@VGS= 10V ·100 avalanche tested DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO247 • Ultra low gate charge CoolMOS™ 900V is designed for: • Quasi

文件：563.26 Kbytes 页数：11 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for CoolMOS™ C3 is CoolMOS™ P7\n 900V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌