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首页>IPW65R190E6>芯片详情
IPW65R190E6_AD/亚德诺_N-Channel MOSFET Transistor安富世纪二部
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产品属性
- 类型
描述
- 制造商编号
:IPW65R190E6
- 生产厂家
:英飞凌
- ID max
:20.2 A
- IDpulsmax
:66 A
- Ptotmax
:151 W
- QG
:73 nC
- QG(typ @10V)
:73 nC
- RDS (on)max
:190 mΩ
- RDS (on)(@10V) max
:190 mΩ
- RthJAmax
:62 K/W
- RthJCmax
:0.83 K/W
- Rth
:0.83 K/W
- VDSmax
:650 V
- VGS(th)
:2.5 V to 3.5 V
- Mounting
:THT
- Package
:TO-247
- Operating Temperaturemin
:-55 °C
- Polarity
:N
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