丝印：07N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features • Optimized for motor drives and battery powered applications • Optimized for top side cooling • High current capability • 175°C rated • 100 avalanche tested • Superior thermal performance • N-Channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-2

文件：1.43628 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ 5 功率 MOSFET 60 V 采用 TOLT 技术，具有出色的热性能

\n优势:\n• Increased system efficiency enabling extended battery life time\n• High power density\n• Superior thermal performance\n• Saving in cooling system\n• Minimized thermal resistance to heatsink;

Infineon

英飞凌

OptiMOS™ 5 Power-Transistor, 60 V

Features « Nechannel « Superior thermal resistance « 100 avalanche tested « Pb-free lead plating; RoHS compliant « Halogen-free according to IEC61249-221

文件：1.78904 Mbytes 页数：11 Pages

INFINEON

英飞凌

TO-251AA-3

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英飞凌

上传：深圳市宇集芯电子有限公司

N/A

5000

上传：深圳市亿智腾科技有限公司