英飞凌对谐振高功率拓扑的回答

\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions;

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英飞凌

丝印：60R045F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.30981 Mbytes 页数：14 Pages

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英飞凌

600V CoolMOS??CFD7 Power Transistor

文件：1.07515 Mbytes 页数：14 Pages

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英飞凌

MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.22498 Mbytes 页数：14 Pages

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英飞凌