英飞凌对谐振高功率拓扑的回答

\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions;

Infineon

英飞凌

丝印：60R035F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.33536 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages

文件：1.26289 Mbytes 页数：14 Pages

Infineon

英飞凌

PG-HSOG-8

INFINEON/英飞凌

上传：深圳市钜韬电子有限公司

HSOF-8

Infineon

英飞凌

上传：深圳市万佳诚业科技有限公司