丝印：044N165N5；Package：PG-HSOF-8；OptiMOS 5 power-Transistor, 150 V

Features *N-channel *Very low on-resistance Rds(on) *Superior thermal resistance *100 avalanche tested *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC1249-2-21

文件：1.81381 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ 5 功率 MOSFET 150 V 4.4 mOhm（TOLL）

\n优势:\n• Less paralleling and cooling required\n• Highest system reliability\n• Low EMI\n• Enabling very compact design;

Infineon

英飞凌

OptiMOS 5 power-Transistor, 150 V

Features *N-channel *Very low on-resistance Rds(on) *Superior thermal resistance *100% avalanche tested *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC1249-2-21

文件：1.81381 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS짧5 Power-Transistor, 150 V

文件：1.1066 Mbytes 页数：10 Pages

INFINEON

英飞凌