IC Reference Design Transformers

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ICE

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

文件：89.37 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.58 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件：133.79 Kbytes 页数：10 Pages

NSC

国半