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首页>IPSH6N03LAG>详情
IPSH6N03LAG_VISHAY/威世_MOSFET N-KANAL POWER MOS威尔健半导体
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产品属性
- 类型
描述
- 型号：
IPSH6N03LAG
- 功能描述：
MOSFET N-KANAL POWER MOS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
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