FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

Description The IPS511/IPS511S are fully protected five terminal high side switches with built in short circuit, over-temperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches Ilim value. The current limitation is activated un

文件：191.28 Kbytes 页数：12 Pages

IRF

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

Infineon

英飞凌

N-Channel Enhancement-Mode Vertical DMOS Power FETs

N-Channel Enhancement-Mode Vertical DMOS Power FETs

文件：70.67 Kbytes 页数：2 Pages

SUTEX

N-Channel Power MOSFETs, 5.5 A, 60-100V

N-Channel Power MOSFETs, 5.5 A, 60-100V

文件：151.65 Kbytes 页数：5 Pages

Fairchild

仙童半导体

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：71.57 Kbytes 页数：7 Pages

HARRIS