TD-8151

MICROWAVENOISETUBES&NOISESOURCES

DESCRIPTION CPClare’sTDSeriesofgasdischargemicrowavenoisetubesandTNSeriesofgasdischargemicrowavenoisesourcesaretheelementinamicrowaveRFsystemthatallowsaccuratemeasurementsofthenoisefigureofthereceiveroritscomponents.Therequirementsofadeviceusedforma

TPL8151

1.5-AWide-InputHigh-CurrentLow-DropoutLinearRegulator

Features •InputVoltageRange:2.75Vto29V •OutputVoltageRange:Adjustablefrom1.25Vto25V •±2%OutputAccuracyoverLineRegulation,Load Regulation,andOperatingTemperatureRange •1.5-AMaximumOutputCurrent •DropoutVoltage:1.2VTypicallyat1.5A •PSRR: –79dB

TPL8151-S

1.5-AWide-InputHigh-CurrentLow-DropoutLinearRegulator

Features •InputVoltageRange:2.75Vto29V •AdjustableOutputVoltageRangefrom1.25V •1.5-AMaximumOutputCurrent •±2%OutputAccuracyoverLineRegulation,Load Regulation,andOperatingTemperatureRange •LowDropoutVoltage:1.2VTypicallyat1.5A •HighPSRR: –79dB

TSD-8151

OFF-LINESWITCHMODETRANSFORMERS

GENERALAPPLICATIONINFORMATION PremierMagneticsOff-LineSwitchModeTransformershavebeendesignedforusewithPowerIntegrations,Inc.TOPXXXseriesofoff-linePWMswitchingregulatorsintheFlybackBuck-Boostcircuitconfiguration.Thisconversiontopologycanprovideisolatedmultipleo

UPC8151TA

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO

UPC8151TA

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

UPC8151TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB)

UPC8151TB

BIPOLARANALOGINTEGRATEDCIRCUIT

UPC8151TB

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

UPC8151TB

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0