IPP111N15N3-G说明书PDF资料库存现货英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPP111N15N3-G	文件：438.68 Kbytes Page：11 Pages	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch 文件：438.68 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IIPP111N15N3	文件：338.64 Kbytes Page：2 Pages	N-Channel MOSFET Transistor 文件：338.64 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IPI111N15N3	文件：331.03 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：331.03 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IPI111N15N3G	文件：438.68 Kbytes Page：11 Pages	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch 文件：438.68 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon

更多IPP111N15N3-G供应商更新时间2025-10-8 11:10:00