OptiMOS 3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：526.21 Kbytes 页数：11 Pages

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OptiMOS3 Power-Transistor

文件：1.02844 Mbytes 页数：11 Pages

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N 沟道功率 MOSFET

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。 • 优化直流-直流转换器技术\n• 出色的栅极电荷 x R DS(ON) 产品 (FOM)\n• 出色的耐热性\n• 双面冷却\n• 寄生电感低\n• 纤薄外形 (<0.7mm)\n• N通道，正常电平\n• 100% 经过雪崩测试\n• 无铅镀层;符合 RoHS\n\n\n优势:;

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OptiMOS3 Power-Transistor

文件：1.02844 Mbytes 页数：11 Pages

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英飞凌

OptiMOS 3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：526.21 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS 3 Power-Transistor Features N-channel, normal level

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：526.21 Kbytes 页数：11 Pages

Infineon

英飞凌