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IPP024N06N3G

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP024N06N3-G

OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP024N06N3

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

024N06N

OptiMOS??Power-TransistorFeaturesIdealforhighfrequencyswitchingandsync.rec.

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

FDB024N06

N-ChannelPowerTrench짰MOSFET60V,265A,2.4m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=1.8mΩ(Typ.)@VGS=10V,ID=75A •F

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

KU024N06P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

KECKEC CORPORATION

KEC株式会社

NVMFD024N06C

MOSFET??Power,DualN-Channel,SO-8FL60V,22.6m,24A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFS024N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,22m,25A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS024N06C

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFWS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    IPP024N06

  • 制造商:

    Infineon Technologies AG

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
TO-220
7524
原厂直供,支持账期,免费供样,技术支持
询价
INFINEON
14+
TO-220
9860
大量原装进口现货,一手货源,一站式服务,可开17%增
询价
INFINEON/英飞凌
2021+
TO-220
18170
原装进口假一罚十
询价
INFINEON
11MY
TO-220
7000
原厂直销
询价
INFINEON/英飞凌
18+
TO-220
5000
进口原装假一赔十支持含税
询价
INFINEON
2021+
TO-220
9450
原装现货。
询价
INFINEON
18+
TO-220
10000
全新原装公司现货
询价
INFINEON
21+
TO-220
1516
十年信誉,只做原装,有挂就有现货!
询价
INFINEON/英飞凌
2024+实力库存
TO-220
6200
只做原厂渠道 可追溯货源
询价
INFINEON
21+
TO-220
60000
原装正品进口现货
询价
更多IPP024N06供应商 更新时间2024-5-31 15:30:00