丝印：65R160F7；Package：PG-VSON-4；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.37456 Mbytes 页数：14 Pages

INFINEON

英飞凌

集成快速体二极管的 650V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

\n优势:\n• Excellent hard-commutation ruggedness\n• Extra safety margin for designs with increased bus voltage\n• Enabling increased power density\n• Outstanding light-load efficiency in industrial SMPS applications\n• Improved full-load efficiency in industrial SMPS applications\n• Price competitiven;

Infineon

英飞凌

HSOF-8

INFINEON

英飞凌

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H-PSOF-8-1

INFINEON

英飞凌

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TDSON-8

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