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首页>IPI80N03S4L03AKSA1>芯片详情
IPI80N03S4L03AKSA1_INFINEON/英飞凌_Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-262安富世纪二部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 制造商编号
:IPI80N03S4L03AKSA1
- 生产厂家
:英飞凌
- 技术
:MOSFET(金属氧化物)
- 漏源电压(Vdss)
:30V
- 电流 - 连续漏极(Id)(25°C 时)
:80A(Tc)
- 驱动电压(最大 Rds On,最小 Rds On)
:4.5V,10V
- 不同 Id,Vgs 时的 Rds On(最大值)
:2.7毫欧 @ 80A,10V
- 不同 Id 时的 Vgs(th)(最大值)
:2.2V @ 90µA
- 不同 Vgs 时的栅极电荷 (Qg)(最大值)
:140nC @ 10V
- Vgs(最大值)
:±16V
- 不同 Vds 时的输入电容(Ciss)(最大值)
:9750pF @ 25V
- FET 功能
:-
- 功率耗散(最大值)
:136W(Tc)
- 工作温度
:-55°C ~ 175°C(TJ)
- 安装类型
:通孔
- 供应商器件封装
:PG-TO262-3
- 封装/外壳
:TO-262-3,长引线,I²Pak,TO-262AA
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