IPI057N08N3-G说明书PDF资料市场行情英飞凌-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IPI057N08N3-G	文件：526.21 Kbytes Page：11 Pages	OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：526.21 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPI057N08N3-G	文件：1.02844 Mbytes Page：11 Pages	OptiMOS3 Power-Transistor 文件：1.02844 Mbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPP057N08N3	文件：338.63 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：338.63 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IPP057N08N3G	文件：1.02844 Mbytes Page：11 Pages	OptiMOS3 Power-Transistor 文件：1.02844 Mbytes 页数：11 Pages	Infineon 英飞凌	Infineon
IPP057N08N3G	文件：526.21 Kbytes Page：11 Pages	OptiMOS 3 Power-Transistor Features N-channel, normal level Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr 文件：526.21 Kbytes 页数：11 Pages	Infineon 英飞凌	Infineon

更多IPI057N08N3-G供应商更新时间2025-12-1 15:01:00