IPDQ60T010S7中文资料英飞凌数据手册PDF规格书

特性 Features

• Optimized price performance in low-frequency switching applications

• High pulse current capability

• Seamless diagnostics at the lowest system cost

• Temperature sense feature for protection and optimized thermal device

utilization cost

Benefits

• Reduction of external sensing elements, hence a more compact design

compared to electromechanical devices

• Increased system performance

• Minimized conduction losses (eliminate/reduce heat sink)

• Increased system performance

• More compact and more straightforward design

• Lower BOM or/and TCO over a prolonged lifetime

• More reliability and longer system lifetime

Potential applications

• Solid state relays and circuit breakers (PLC, Energy storage)

• Line rectification in high power/performance applications (Computing,

Telecom, UPS and Solar)

Product validation

Fully qualified according to JEDEC for Industrial Applications

Please note: The source and sense source pins are not exchangeable.

Their exchange might lead to malfunction. For paralleling 4pin MOSFET

devices the placement of the gate resistor is generally recommended to be

on the Driver Source instead of the Gate.